Transforming XML file: NeuroMLFiles/Examples/ChannelML/NaChannel_HH.xml using XSL file: NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl

View original file before transform

Converting the file: NaChannel_HH.xml

General notes
Notes present in ChannelML file
ChannelML file containing a single Channel description

Unit system of ChannelML file
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.)
Physiological Units

Channel: NaChannel

Status of element in file
Comment: Equations adapted from HH paper for modern convention of external potential being zero
Contributor: Padraig Gleeson
As described in the ChannelML file
Simple example of Na conductance in squid giant axon. Based on channel from Hodgkin and Huxley 1952
Translators of the model to NeuroML:
   Padraig Gleeson  (UCL)  p.gleeson - at -
Referenced publicationA. L. Hodgkin and A. F. Huxley, A quantitative description of membrane current and its application to conduction and excitation in nerve, J. Physiol., vol. 117, pp. 500-544, 1952. Pubmed
Reference in NeuronDB Na channels
Current voltage relationshipohmic
Ion involved in channel
The ion which is actually flowing through the channel and its default reversal potential. Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed.
na (default Ena = 50 mV)
Default maximum conductance density
Note that the conductance density of the channel will be set when it is placed on the cell.
Gmax = 120 mS cm-2
Conductance expression
Expression giving the actual conductance as a function of time and voltage
Gna(v,t) = Gmax * m(v,t) 3 * h(v,t)
Current due to channel
Ionic current through the channel
Ina(v,t) = Gna(v,t) * (v - Ena)

Gate: m

The equations below determine the dynamics of gating state m

Instances of gating elements3
Closed statem0
Open statem
    Transition: alpha from m0 to m
Expressionalpha(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B))    (exp_linear)
Parameter values A = 1 ms-1   B = 10 mV   V1/2 = -40 mV
alpha(v) = 1 * ( v - (-40)) / 10
1- e -(( v - (-40)) / 10)
    Transition: beta from m to m0
Expressionbeta(v) = A*exp((v-V1/2)/B)    (exponential)
Parameter values A = 4 ms-1   B = -18 mV   V1/2 = -65 mV
Substituted beta(v) = 4 * e (v - (-65))/-18

Gate: h

The equations below determine the dynamics of gating state h

Instances of gating elements1
Closed stateh0
Open stateh
    Transition: alpha from h0 to h
Expressionalpha(v) = A*exp((v-V1/2)/B)    (exponential)
Parameter values A = 0.07 ms-1   B = -20 mV   V1/2 = -65 mV
Substituted alpha(v) = 0.07 * e (v - (-65))/-20
    Transition: beta from h to h0
Expressionbeta(v) = A / (1 + exp((v-V1/2)/B))    (sigmoid)
Parameter values A = 1 ms-1   B = -10 mV   V1/2 = -35 mV
beta(v) = 1
1+ e ( v - (-35))/-10

Time to transform file: 0.111 secs