Transforming XML file: NeuroMLFiles/Examples/ChannelML/NaChannel_HH.xml
using XSL file:
NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl
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Converting the file: NaChannel_HH.xml
General notes 
Notes present in ChannelML file 
 ChannelML file containing a single Channel description 
Unit system of ChannelML file 
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.) 
 Physiological Units 
Channel: NaChannel
Name  NaChannel 
Status 
Status of element in file 
 Stable
Comment: Equations adapted from HH paper for modern convention of external potential being zero Contributor: Padraig Gleeson 
Description 
As described in the ChannelML file 
 Simple example of Na conductance in squid giant axon. Based on channel from Hodgkin and Huxley 1952 
Authors 
Translators of the model to NeuroML: 
Padraig Gleeson
(UCL)
p.gleeson  at  ucl.ac.uk 

Referenced publication  A. L. Hodgkin and A. F. Huxley, A quantitative description of membrane current and
its application to conduction and excitation in nerve, J. Physiol., vol. 117, pp. 500544, 1952.
Pubmed

Reference in NeuronDB 
Na channels

Current voltage relationship  ohmic 
Ion involved in channel 
The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. 
 na (default E_{na} = 50 mV)

Default maximum conductance density 
Note that the conductance density of the channel will be set when it is placed on the cell. 
 G_{max} = 120 mS cm^{2} 
Conductance expression 
Expression giving the actual conductance as a function of time and voltage 
 G_{na}(v,t) = G_{max}
* m(v,t)
^{3} * h(v,t)

Current due to channel 
Ionic current through the channel 
 I_{na}(v,t) =
G_{na}(v,t) * (v  E_{na}) 
Gate: m
The equations below determine the dynamics of gating state m

Instances of gating elements  3 
Closed state  m0 
Open state  m 

Transition: alpha from m0 to m 
Expression  alpha(v) = A*((vV_{1/2})/B) / (1  exp((vV_{1/2})/B)) (exp_linear) 
Parameter values 
A = 1 ms^{1}
B = 10 mV
V_{1/2} = 40 mV

Substituted 
alpha(v) =

1 * (
v  (40)) / 10

1 e^{ ((
v  (40)) / 10)}



Transition: beta from m to m0 
Expression  beta(v) = A*exp((vV_{1/2})/B) (exponential) 
Parameter values 
A = 4 ms^{1}
B = 18 mV
V_{1/2} = 65 mV

Substituted 
beta(v) =
4 * e ^{
(v  (65))/18} 
Gate: h
The equations below determine the dynamics of gating state h

Instances of gating elements  1 
Closed state  h0 
Open state  h 

Transition: alpha from h0 to h 
Expression  alpha(v) = A*exp((vV_{1/2})/B) (exponential) 
Parameter values 
A = 0.07 ms^{1}
B = 20 mV
V_{1/2} = 65 mV

Substituted 
alpha(v) =
0.07 * e ^{
(v  (65))/20} 

Transition: beta from h to h0 
Expression  beta(v) = A / (1 + exp((vV_{1/2})/B)) (sigmoid) 
Parameter values 
A = 1 ms^{1}
B = 10 mV
V_{1/2} = 35 mV

Substituted 
beta(v) =

1

1+ e^{ (
v  (35))/10}



Time to transform file: 0.114 secs