| Name | KChannelKS |
| Description |
| As described in the ChannelML file |
| K conductance with 5 kinetic states. NOTE: currently a mapping is only provided
to the NEURON Channel Builder format and PSICS |
| Current voltage relationship | ohmic |
| Ion involved in channel |
| The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. |
| k (default Ek = -77.0 mV)
|
| Default maximum conductance density |
| Note that the conductance density of the channel will be set when it is placed on the cell. |
| Gmax = 36 mS cm-2 |
| Conductance expression |
| Expression giving the actual conductance as a function of time and voltage |
| Gk(v,t) = Gmax
* n(v,t)
|
| Current due to channel |
| Ionic current through the channel |
| Ik(v,t) =
Gk(v,t) * (v - Ek) |
|
Gate: n
The equations below determine the dynamics of gating state n
|
| Instances of gating elements | 1 |
| Closed state | n0 |
| Closed state | n1 |
| Closed state | n2 |
| Closed state | n3 |
| Open state | n (fractional conductance: 1) |
| |
| Transition: alpha_n0_n1 from n0 to n1 |
| Expression | alpha_n0_n1(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B)) (exp_linear) |
| Parameter values |
A = 0.4 ms-1
B = 10 mV
V1/2 = -55 mV
|
| Substituted |
|
alpha_n0_n1(v) =
|
0.4 * (
v - (-55)) / 10
|
|
1- e -((
v - (-55)) / 10)
|
|
| |
| Transition: beta_n0_n1 from n1 to n0 |
| Expression | beta_n0_n1(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 0.125 ms-1
B = -80 mV
V1/2 = -65 mV
|
| Substituted |
beta_n0_n1(v) =
0.125 * e
(v - (-65))/-80 |
| |
| Transition: alpha_n1_n2 from n1 to n2 |
| Expression | alpha_n1_n2(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B)) (exp_linear) |
| Parameter values |
A = 0.3 ms-1
B = 10 mV
V1/2 = -55 mV
|
| Substituted |
|
alpha_n1_n2(v) =
|
0.3 * (
v - (-55)) / 10
|
|
1- e -((
v - (-55)) / 10)
|
|
| |
| Transition: beta_n1_n2 from n2 to n1 |
| Expression | beta_n1_n2(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 0.25 ms-1
B = -80 mV
V1/2 = -65 mV
|
| Substituted |
beta_n1_n2(v) =
0.25 * e
(v - (-65))/-80 |
| |
| Transition: alpha_n2_n3 from n2 to n3 |
| Expression | alpha_n2_n3(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B)) (exp_linear) |
| Parameter values |
A = 0.2 ms-1
B = 10 mV
V1/2 = -55 mV
|
| Substituted |
|
alpha_n2_n3(v) =
|
0.2 * (
v - (-55)) / 10
|
|
1- e -((
v - (-55)) / 10)
|
|
| |
| Transition: beta_n2_n3 from n3 to n2 |
| Expression | beta_n2_n3(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 0.375 ms-1
B = -80 mV
V1/2 = -65 mV
|
| Substituted |
beta_n2_n3(v) =
0.375 * e
(v - (-65))/-80 |
| |
| Transition: alpha_n3_n from n3 to n |
| Expression | alpha_n3_n(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B)) (exp_linear) |
| Parameter values |
A = 0.1 ms-1
B = 10 mV
V1/2 = -55 mV
|
| Substituted |
|
alpha_n3_n(v) =
|
0.1 * (
v - (-55)) / 10
|
|
1- e -((
v - (-55)) / 10)
|
|
| |
| Transition: beta_n3_n from n to n3 |
| Expression | beta_n3_n(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 0.5 ms-1
B = -80 mV
V1/2 = -65 mV
|
| Substituted |
beta_n3_n(v) =
0.5 * e
(v - (-65))/-80 |